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LTH209-01 reflective optocoupler
SKU: LTH209-01
- 1.60 €
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- Customer price 1.52 € -5%
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Discover the reliable LTH-209-01 reflective optocoupler, designed for precise object detection with non-contact switching and rapid response times. This compact device is an excellent solution for various sensing applications.
General Information
The LTH-209-01 integrates an infrared emitting diode and an NPN silicon phototransistor. These components are strategically positioned side by side with converging optical axes and are securely encased in a durable black plastic housing.
Key Features
- Non-contact switching
- Suitable for direct PC board or dual-in-line socket mounting
- Fast switching speed
- Reflective object sensor
Applications
The LTH-209-01 is specifically designed for reliable object detection.
Additional Details
For testing purposes, the reflective surface used is Eastman Kodak (or equivalent) neutral white paper, providing 90% diffused reflectance, and positioned 3.81 mm (0.15 inch) from the read head.
All dimensions are in millimeters (inches).
Tolerance is ±0.25mm (.010") unless otherwise noted.
Specifications are subject to change without notice.
General Information
The LTH-209-01 integrates an infrared emitting diode and an NPN silicon phototransistor. These components are strategically positioned side by side with converging optical axes and are securely encased in a durable black plastic housing.
Key Features
- Non-contact switching
- Suitable for direct PC board or dual-in-line socket mounting
- Fast switching speed
- Reflective object sensor
Applications
The LTH-209-01 is specifically designed for reliable object detection.
Additional Details
For testing purposes, the reflective surface used is Eastman Kodak (or equivalent) neutral white paper, providing 90% diffused reflectance, and positioned 3.81 mm (0.15 inch) from the read head.
All dimensions are in millimeters (inches).
Tolerance is ±0.25mm (.010") unless otherwise noted.
Specifications are subject to change without notice.
Sensing Method: Reflective
Sensing Distance: 3.81 mm
Collector-Emitter Voltage VCEO Max: 30 V
Continuous Forward Current (IR Diode): 50 mA
Reverse Voltage (IR Diode): 5 V
Peak Forward Current (IR Diode): 3 A (Pulse Width = 10 μs, 300 pps)
Transistor Collector Current: 20 mA
Transistor Power Dissipation: 100 mW (Derate Linearly 1.33 mW/°C from 25°C)
Diode Power Dissipation: 75 mW (Derate Linearly 1.33 mW/°C from 25°C)
Phototransistor Collector-Emitter Voltage: 30 V
Phototransistor Emitter-Collector Voltage: 5 V
Operating Temperature Range: -35°C to +65°C
Storage Temperature Range: -40°C to +100°C
Lead Soldering Temperature: 260°C for 5 Seconds [1.6mm(.063") From Case]
Forward Voltage (Input LED): 1.2 V (min), 1.6 V (max) at IF = 20mA
Reverse Current (Input LED): 100 μA (max) at VR=5V
Collector-Emitter Breakdown Voltage: 30 V at IC=1mA
Emitter-Collector Breakdown Voltage: 5 V at IE=0.1mA
Collector Dark Current: 100 nA (max)
Collector-Emitter Saturation Voltage: 0.4V (max)
On State Collector Current: 160 uA (min) at IF=20mA, VCE=5V
Rise Time: 0.4 us
Fall Time: 0.4 us
Lead Spacing Distance: 10.2 mm
Emitting and Detecting Gap: 3.81 mm
Sensing Distance: 3.81 mm
Collector-Emitter Voltage VCEO Max: 30 V
Continuous Forward Current (IR Diode): 50 mA
Reverse Voltage (IR Diode): 5 V
Peak Forward Current (IR Diode): 3 A (Pulse Width = 10 μs, 300 pps)
Transistor Collector Current: 20 mA
Transistor Power Dissipation: 100 mW (Derate Linearly 1.33 mW/°C from 25°C)
Diode Power Dissipation: 75 mW (Derate Linearly 1.33 mW/°C from 25°C)
Phototransistor Collector-Emitter Voltage: 30 V
Phototransistor Emitter-Collector Voltage: 5 V
Operating Temperature Range: -35°C to +65°C
Storage Temperature Range: -40°C to +100°C
Lead Soldering Temperature: 260°C for 5 Seconds [1.6mm(.063") From Case]
Forward Voltage (Input LED): 1.2 V (min), 1.6 V (max) at IF = 20mA
Reverse Current (Input LED): 100 μA (max) at VR=5V
Collector-Emitter Breakdown Voltage: 30 V at IC=1mA
Emitter-Collector Breakdown Voltage: 5 V at IE=0.1mA
Collector Dark Current: 100 nA (max)
Collector-Emitter Saturation Voltage: 0.4V (max)
On State Collector Current: 160 uA (min) at IF=20mA, VCE=5V
Rise Time: 0.4 us
Fall Time: 0.4 us
Lead Spacing Distance: 10.2 mm
Emitting and Detecting Gap: 3.81 mm
LiteOn_LTH_209_01-134337.pdf
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