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4N33 Vis=7500V Vco=30V Optron
SKU: 4N33
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The 4N33 is a high-performance 6-Pin photodarlington optocoupler, ideal for a wide range of general-purpose applications. This device ensures reliable electrical isolation and efficient signal transfer between circuits.
General Information
The 4N33 features a gallium arsenide infrared LED and a silicon photodarlington sensor.
Key Features
- High sensitivity to low input drive current
- Meets or exceeds all JEDEC Registered Specifications
- High Current Transfer Ratio: Ensures efficient signal transmission between circuits.
- High Isolation Resistance: Provides excellent electrical isolation, minimizing leakage current.
- Standard plastic DIP package
Applications
- Low power logic circuits
- Telecommunications equipment
- Portable electronics
- Solid state relays
- Interfacing coupling systems of different potentials and impedances
- Switch mode power supplies
- Computer peripheral interface
- Microprocessor system interface
The 4N33 offers a compelling alternative to reed and mercury relays, providing benefits such as extended operational life, high-speed switching capabilities, and the elimination of magnetic fields. This reliable component is conveniently available in a DIP-6 package.
General Information
The 4N33 features a gallium arsenide infrared LED and a silicon photodarlington sensor.
Key Features
- High sensitivity to low input drive current
- Meets or exceeds all JEDEC Registered Specifications
- High Current Transfer Ratio: Ensures efficient signal transmission between circuits.
- High Isolation Resistance: Provides excellent electrical isolation, minimizing leakage current.
- Standard plastic DIP package
Applications
- Low power logic circuits
- Telecommunications equipment
- Portable electronics
- Solid state relays
- Interfacing coupling systems of different potentials and impedances
- Switch mode power supplies
- Computer peripheral interface
- Microprocessor system interface
The 4N33 offers a compelling alternative to reed and mercury relays, providing benefits such as extended operational life, high-speed switching capabilities, and the elimination of magnetic fields. This reliable component is conveniently available in a DIP-6 package.
Input Forward Current (IF): 60 mA
Peak Reverse Voltage (VR): 3.0 V
Input Forward Voltage (VF) at IF=10mA: 1.2 V (Typ), 1.5 V (Max)
Reverse Leakage Current (IR) at VR=3.0V: 0.001 µA (Typ), 100 µA (Max)
Capacitance (C) at VF=0V, f=1.0MHz: 150 pF
Collector-Emitter Breakdown Voltage (BVCEO) at IC=100µA, IB=0: 30 V (Min), 60 V (Typ)
Collector-Base Breakdown Voltage (BVCBO) at IC=100µA, IE=0: 30 V (Min), 100 V (Typ)
Emitter-Collector Breakdown Voltage (BVECO) at IE=100µA, IB=0: 5.0 V (Min), 8.0 V (Typ)
Collector-Emitter Dark Current (ICEO) at VCE=10V, Base Open: 1 nA (Typ), 100 nA (Max)
DC Current Gain (hFE) at VCE=5.0V, IC=500µA: 5000
Collector Output Current (IC) at IF=10mA, VCE=10V, IB=0: 50 mA (Min)
Saturation Voltage (VCE(sat)) at IF=8.0mA, IC=2.0mA: 1.0 V (Max)
Input-Output Isolation Voltage (VISO): 5300 Vac(rms), 2500 VDC (4N32), 1500 VDC (4N33)
Isolation Resistance (RISO) at VI-O=500VDC: 10^11 Ω
Isolation Capacitance (CISO) at VI-O= , f=1 MHz: 0.8 pF
Turn-on Time (ton) at IF=200mA, IC=50mA, VCC=10V: 5.0 µs (Typ)
Operating Temperature: -55 to 100 °C
Channel: 1
Height: 3.81 mm
Length: 8.7 mm
Creepage: 7.4 mm (Min)
Distance Through Isolation: 0.4 mm (Min)
Clearance Distance: 7.5 mm (Min) S/SL Type, 8.0 mm (Min) M/SLM Type
Peak Reverse Voltage (VR): 3.0 V
Input Forward Voltage (VF) at IF=10mA: 1.2 V (Typ), 1.5 V (Max)
Reverse Leakage Current (IR) at VR=3.0V: 0.001 µA (Typ), 100 µA (Max)
Capacitance (C) at VF=0V, f=1.0MHz: 150 pF
Collector-Emitter Breakdown Voltage (BVCEO) at IC=100µA, IB=0: 30 V (Min), 60 V (Typ)
Collector-Base Breakdown Voltage (BVCBO) at IC=100µA, IE=0: 30 V (Min), 100 V (Typ)
Emitter-Collector Breakdown Voltage (BVECO) at IE=100µA, IB=0: 5.0 V (Min), 8.0 V (Typ)
Collector-Emitter Dark Current (ICEO) at VCE=10V, Base Open: 1 nA (Typ), 100 nA (Max)
DC Current Gain (hFE) at VCE=5.0V, IC=500µA: 5000
Collector Output Current (IC) at IF=10mA, VCE=10V, IB=0: 50 mA (Min)
Saturation Voltage (VCE(sat)) at IF=8.0mA, IC=2.0mA: 1.0 V (Max)
Input-Output Isolation Voltage (VISO): 5300 Vac(rms), 2500 VDC (4N32), 1500 VDC (4N33)
Isolation Resistance (RISO) at VI-O=500VDC: 10^11 Ω
Isolation Capacitance (CISO) at VI-O= , f=1 MHz: 0.8 pF
Turn-on Time (ton) at IF=200mA, IC=50mA, VCC=10V: 5.0 µs (Typ)
Operating Temperature: -55 to 100 °C
Channel: 1
Height: 3.81 mm
Length: 8.7 mm
Creepage: 7.4 mm (Min)
Distance Through Isolation: 0.4 mm (Min)
Clearance Distance: 7.5 mm (Min) S/SL Type, 8.0 mm (Min) M/SLM Type
4n33-1768778.pdf
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